Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRLB4030PBF

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Subtotal (1 tube of 50 units)*

£56.85

(exc. VAT)

£68.20

(inc. VAT)

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  • 550 unit(s) ready to ship
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Per unit
Per Tube*
50 - 50£1.137£56.85
100 - 200£1.035£51.75
250 +£1.009£50.45

*price indicative

RS Stock No.:
124-9026
Mfr. Part No.:
IRLB4030PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

4.83mm

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

87 nC @ 4.5 V

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.02mm

COO (Country of Origin):
MX

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