Infineon HEXFET N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220AB IRFB4110GPBF
- RS Stock No.:
- 865-5807
- Mfr. Part No.:
- IRFB4110GPBF
- Brand:
- Infineon
Get a bulk buy discount
Add 10 more to save £2.15
View bulk pricing optionsSubtotal (1 tube of 2 units)*
£8.74
(exc. VAT)
£10.48
(inc. VAT)
FREE delivery for orders over £60.00
Last RS stock
- 8 left, ready to ship
- Final 128 unit(s) shipping from 20 November 2026
Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 2 - 8 | £4.37 | £8.74 | - |
| 10 - 18 | £4.155 | £8.31 | £2.15 |
| 20 - 48 | £3.985 | £7.97 | £7.70 |
| 50 - 98 | £3.805 | £7.61 | £28.25 |
| 100 + | £3.06 | £6.12 | £131.00 |
*price indicative
- RS Stock No.:
- 865-5807
- Mfr. Part No.:
- IRFB4110GPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 370W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Height | 16.51mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 370W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Height 16.51mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220AB IRFB4110GPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP4110PBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFB4110PBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRLB4030PBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF
- Infineon HEXFET N-Channel MOSFET & Diode 100 V Enhancement, 3-Pin TO-247 AUIRFP4110
- Infineon HEXFET N-Channel MOSFET 100 V TO-263 IRLS4030TRLPBF