Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110GPBF
- RS Stock No.:
- 865-5807
- Mfr. Part No.:
- IRFB4110GPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 2 units)*
£7.28
(exc. VAT)
£8.74
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Plus 10 unit(s) shipping from 03 November 2025
- Final 214 unit(s) shipping from 10 November 2025
Units | Per unit | Per Tube* |
|---|---|---|
| 2 - 8 | £3.64 | £7.28 |
| 10 - 18 | £3.46 | £6.92 |
| 20 - 48 | £3.32 | £6.64 |
| 50 - 98 | £3.17 | £6.34 |
| 100 + | £2.55 | £5.10 |
*price indicative
- RS Stock No.:
- 865-5807
- Mfr. Part No.:
- IRFB4110GPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 370 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Height | 16.51mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 370 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 16.51mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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