Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110PBF

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RS Stock No.:
495-578
Mfr. Part No.:
IRFB4110PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mO

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

4.82mm

Length

10.66mm

Minimum Operating Temperature

-55 °C

Height

9.02mm

Forward Diode Voltage

1.3V

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


Motor Control MOSFET


Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET


A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 370W Maximum Power Dissipation - IRFB4110PBF


This MOSFET serves as an efficient power transistor tailored for applications in automation, electronics, and electrical industries. Its robust construction and precise specifications provide a versatile solution for applications where efficiency and reliability are essential. With an enhancement mode design and an N-channel configuration, it is suitable for high-speed switching operations.

Features & Benefits


• Maximum continuous drain current of 180A supports high performance
• Drain-to-source voltage range of 100V allows for a variety of applications
• Low RDS(on) of 4.5mΩ reduces power loss and enhances efficiency
• Power dissipation capability of up to 370W ensures stability
• Improved thermal characteristics foster reliability in extreme conditions
• Full characterisation on avalanche and dynamic dv/dt ruggedness promotes durability

Applications


• Employed in high-efficiency synchronous rectification for power supplies
• Suitable for uninterruptible power supply systems
• Ideal for high-speed power switching circuits
• Applicable in hard switched and high frequency circuits

What is the suitable operating temperature range for optimal performance?


It operates effectively within -55°C to +175°C, ensuring functionality across various environments.

How does the MOSFET minimise energy loss in circuits?


The low RDS(on) of 4.5mΩ significantly cuts conduction losses, allowing for efficient operation in power electronics.

Can it be used in high-frequency applications?


Yes, its design facilitates high-speed switching, making it appropriate for applications requiring rapid on-off transitions.

What are the thermal resistance values for proper mounting?


The junction-to-case thermal resistance is 0.402°C/W, while the case-to-sink resistance is 0.50°C/W, enabling effective heat dissipation.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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