Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110PBF

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RS Stock No.:
495-578
Mfr. Part No.:
IRFB4110PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mO

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.82mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.66mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Transistor Material

Si

Height

9.02mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

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