Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110PBF
- RS Stock No.:
- 495-578
- Mfr. Part No.:
- IRFB4110PBF
- Brand:
- Infineon
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Units | Per unit |
---|---|
1 + | £1.72 |
*price indicative
- RS Stock No.:
- 495-578
- Mfr. Part No.:
- IRFB4110PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 180 A | |
Maximum Drain Source Voltage | 100 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 4.5 mO | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 370 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
Width | 4.82mm | |
Length | 10.66mm | |
Minimum Operating Temperature | -55 °C | |
Height | 9.02mm | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 mO | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 370 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Width 4.82mm | ||
Length 10.66mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||
Forward Diode Voltage 1.3V | ||
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Synchronous Rectifier MOSFET
Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 370W Maximum Power Dissipation - IRFB4110PBF
Features & Benefits
• Drain-to-source voltage range of 100V allows for a variety of applications
• Low RDS(on) of 4.5mΩ reduces power loss and enhances efficiency
• Power dissipation capability of up to 370W ensures stability
• Improved thermal characteristics foster reliability in extreme conditions
• Full characterisation on avalanche and dynamic dv/dt ruggedness promotes durability
Applications
• Suitable for uninterruptible power supply systems
• Ideal for high-speed power switching circuits
• Applicable in hard switched and high frequency circuits
What is the suitable operating temperature range for optimal performance?
How does the MOSFET minimise energy loss in circuits?
Can it be used in high-frequency applications?
What are the thermal resistance values for proper mounting?
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