Infineon HEXFET N-Channel MOSFET, 18 A, 55 V, 3-Pin TO-220AB IRLZ24NPBF
- RS Stock No.:
- 919-4895
- Mfr. Part No.:
- IRLZ24NPBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 919-4895
- Mfr. Part No.:
- IRLZ24NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 18 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 45 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 15 nC @ 5 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 8.77mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 5 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRLZ24NPBF
This MOSFET is an essential component for various power applications, known for its efficient performance and robust specifications. Infineon's HEXFET technology ensures precision in electronic designs, making it a popular option in automation and mechanical industries. It effectively controls current flow in devices, significantly impacting modern electrical systems.
Features & Benefits
• Supports a maximum continuous drain current of 18A for high performance
• Operates under a maximum drain-source voltage of 55V for versatile applications
• Low gate threshold voltage minimises energy loss during operation
• Exhibits low drain-source resistance for enhanced efficiency
• Features enhancement mode capability for precise switching
• Can withstand temperatures up to +175°C for functionality under harsh conditions
• Operates under a maximum drain-source voltage of 55V for versatile applications
• Low gate threshold voltage minimises energy loss during operation
• Exhibits low drain-source resistance for enhanced efficiency
• Features enhancement mode capability for precise switching
• Can withstand temperatures up to +175°C for functionality under harsh conditions
Applications
• Utilised for power management in industrial automation systems
• Integrated into switching power supplies for optimal performance
• Employed in motor drive circuits for improved control
• Incorporated in various consumer electronics for dependable performance
• Integrated into switching power supplies for optimal performance
• Employed in motor drive circuits for improved control
• Incorporated in various consumer electronics for dependable performance
What are the recommended gate-source voltages for proper operation?
The device can handle a maximum gate-source voltage of -16V to +16V, ensuring stable performance.
Can this component be used in high-temperature environments?
Yes, it operates effectively in temperatures ranging from -55°C to +175°C, suitable for diverse applications.
How does the low Rds(on) impact energy consumption?
A low drain-source resistance minimises power loss, enhancing overall efficiency and reducing heat generation during operation.
What considerations should be made during installation?
Proper attention should be given to the mounting type to ensure secure installation and adequate cooling to prevent overheating.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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