Infineon HEXFET Type N-Channel MOSFET, 53 A, 55 V Enhancement, 3-Pin TO-220AB IRFZ46NPBF

RS Stock No.:: 541-0711
Mfr. Part No.:: IRFZ46NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 53 A, 55 V Enhancement, 3-Pin TO-220AB IRFZ46NPBF

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RS Stock No.:: 541-0711
Mfr. Part No.:: IRFZ46NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	53A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220AB
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	17mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	72nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	107W
	Maximum Operating Temperature	175°C
	Height	9.02mm
	Standards/Approvals	No
	Width	4.82 mm
	Length	10.66mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 53A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220AB
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 17mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 72nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 107W
	Maximum Operating Temperature 175°C
	Height 9.02mm
	Standards/Approvals No
	Width 4.82 mm
	Length 10.66mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 53A Maximum Continuous Drain Current, 107W Maximum Power Dissipation - IRFZ46NPBF

This MOSFET is essential for high-efficiency applications in automation and electronics. It effectively manages significant currents and voltages, making it applicable in various industrial settings. Its advanced design supports reliable operation in extreme temperatures, addressing diverse electronic needs while simplifying circuit designs.

Features & Benefits

• Continuous drain current capability of 53A for demanding loads

• Maximum power dissipation of 107W for effective thermal management

• Low on-resistance of 17mΩ, improving efficiency

• Enhancement mode design allows for versatile application

• Defined gate threshold voltage specifications ensure precise control

Applications

• Power conversion in industrial automation systems

• Motor control and driving circuits

• Power management systems for energy-efficient designs

• Implementation in switch mode power supplies for consistency

• Electronic switching requiring swift response

Can it operate at high temperatures?

Yes, it operates efficiently at temperatures up to +175°C.

What current can it handle at elevated temperatures?

At 100°C, it can safely manage a continuous drain current of 37A.

How do I ensure optimal thermal performance during installation?

Using a TO-220AB package with adequate heat sinking can effectively minimise thermal resistance and ensure performance.

What are the gate threshold voltage specifications?

The gate threshold voltage is specified to range between 2V and 4V for accurate operational control.

Is it suitable for use in power supplies?

Yes, it is effective in switch mode power supplies due to its rapid switching capabilities and low on-resistance.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today