Infineon IMW65 SiC N-Channel MOSFET, 53 A, 650 V, 3-Pin PG-TO247-3 IMW65R033M2HXKSA1
- RS Stock No.:
- 351-865
- Mfr. Part No.:
- IMW65R033M2HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£10.62
(exc. VAT)
£12.74
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £10.62 |
| 10 - 99 | £9.56 |
| 100 + | £8.81 |
*price indicative
- RS Stock No.:
- 351-865
- Mfr. Part No.:
- IMW65R033M2HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 53 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-TO247-3 | |
| Series | IMW65 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 53 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-TO247-3 | ||
Series IMW65 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET 650 V, 33 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Excellent figures of merit (FOMs)
Best in class RDS(on)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGSoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT
Best in class RDS(on)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGSoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT
Related links
- Infineon IMW65 SiC N-Channel MOSFET 650 V, 3-Pin PG-TO247-3 IMW65R060M2HXKSA1
- Infineon IMW65 SiC N-Channel MOSFET 650 V, 3-Pin PG-TO247-3 IMW65R026M2HXKSA1
- Infineon IMW65 SiC N-Channel MOSFET 650 V, 3-Pin PG-TO247-3 IMW65R010M2HXKSA1
- Infineon IMZA65 SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R033M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R015M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R050M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R040M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R020M2HXKSA1