Infineon IMW65 SiC N-Channel MOSFET, 53 A, 650 V, 3-Pin PG-TO247-3 IMW65R033M2HXKSA1

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RS Stock No.:
351-865
Mfr. Part No.:
IMW65R033M2HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

650 V

Package Type

PG-TO247-3

Series

IMW65

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET 650 V, 33 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Excellent figures of merit (FOMs)
Best in class RDS(on)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGSoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT

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