Infineon IMW65 Type N-Channel MOSFET, 64 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R026M2HXKSA1

Bulk discount available

Subtotal (1 unit)*

£12.99

(exc. VAT)

£15.59

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£12.99
10 - 99£11.69
100 +£10.78

*price indicative

RS Stock No.:
351-864
Mfr. Part No.:
IMW65R026M2HXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

64A

Output Power

227W

Maximum Drain Source Voltage Vds

650V

Series

IMW65

Package Type

PG-TO-247

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

21.5 mm

Length

16.3mm

Height

5.3mm

Standards/Approvals

JEDEC

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET 650 V, 26 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Excellent figures of merit (FOMs)

Best in class RDS(on)

High robustness and overall quality

Flexible driving voltage range

Support for unipolar driving (VGSoff=0)

Best immunity against turn-on effects

Improved package interconnect with .XT

Related links