Infineon IPW Type N-Channel MOSFET, 64 A, 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1
- RS Stock No.:
- 349-266
- Mfr. Part No.:
- IPW60R037CM8XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£7.44
(exc. VAT)
£8.93
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £7.44 |
| 10 - 99 | £6.70 |
| 100 - 499 | £6.18 |
| 500 - 999 | £5.73 |
| 1000 + | £5.13 |
*price indicative
- RS Stock No.:
- 349-266
- Mfr. Part No.:
- IPW60R037CM8XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Power Dissipation Pd | 329W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Power Dissipation Pd 329W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
Related links
- Infineon IPW N-Channel MOSFET 600 V, 4-Pin PG-TO247-3 IPW60R016CM8XKSA1
- Infineon IPZ N-Channel MOSFET 600 V, 4-Pin PG-TO247-4 IPZA60R037CM8XKSA1
- Infineon IMZA65 SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R026M2HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R020M2HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R040M2HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R020M1HXKSA1
- Infineon AIM SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4 AIMZH120R010M1TXKSA1