Infineon IPW Type N-Channel MOSFET, 21 A, 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1
- RS Stock No.:
- 273-3027
- Mfr. Part No.:
- IPW65R115CFD7AXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£131.04
(exc. VAT)
£157.26
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 210 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £4.368 | £131.04 |
| 60 + | £4.032 | £120.96 |
*price indicative
- RS Stock No.:
- 273-3027
- Mfr. Part No.:
- IPW65R115CFD7AXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 115mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AECQ101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 115mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AECQ101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon automotive SJ power MOSFET is in TO-247 package is part of the automotive qualified 650V cool MOS SJ power MOSFET CFD7A product family.
Enabling of higher power density designs
Scalable as designed for use in PFC and DC-DC stage
Granular portfolio available
Related links
- Infineon N-Channel MOSFET 650 V, 3-Pin D2PAK IPB65R115CFD7AATMA1
- Infineon IMLT65 SiC N-Channel MOSFET 650 V, 16-Pin PG-HDSOP-16 IMLT65R026M2HXTMA1
- Infineon N-Channel MOSFET 100 V PG-WSON BSC070N10NS5SCATMA1
- Infineon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R060CFD7XKSA1
- Infineon N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R099CFD7AXKSA1
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK IRF2807STRLPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 8-Pin PQFN 5 x 6 IRFH8325TRPBF
- Infineon IAU Dual Dual N-Channel MOSFET 40 V, 8-Pin PG-TDSON-8 IAUCN04S7N040DATMA1