Infineon IMW65 SiC N-Channel MOSFET, 130 A, 650 V, 3-Pin PG-TO247-3 IMW65R010M2HXKSA1
- RS Stock No.:
- 351-950
- Mfr. Part No.:
- IMW65R010M2HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£26.46
(exc. VAT)
£31.75
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 1 - 9 | £26.46 |
| 10 - 99 | £23.81 |
| 100 + | £21.96 |
*price indicative
- RS Stock No.:
- 351-950
- Mfr. Part No.:
- IMW65R010M2HXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 130 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-TO247-3 | |
| Series | IMW65 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-TO247-3 | ||
Series IMW65 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
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