Infineon IMW65 SiC N-Channel MOSFET, 130 A, 650 V, 3-Pin PG-TO247-3 IMW65R010M2HXKSA1

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£26.46

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£31.75

(inc. VAT)

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1 - 9£26.46
10 - 99£23.81
100 +£21.96

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RS Stock No.:
351-950
Mfr. Part No.:
IMW65R010M2HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

650 V

Package Type

PG-TO247-3

Series

IMW65

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Enables BOM savings
Highest reliability
Enables top efficiency and power density
Ease of use
Full compatibility with existing vendors
Allows designs without fan or heatsink

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