Infineon LogicFET N-Channel MOSFET, 130 A, 40 V, 3-Pin TO-220AB IRL1004PBF

Subtotal (1 tube of 50 units)*

£79.10

(exc. VAT)

£94.90

(inc. VAT)

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RS Stock No.:
919-4943
Mfr. Part No.:
IRL1004PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

40 V

Series

LogicFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

100 nC @ 4.5 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

8.77mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 40V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon LogicFET Series MOSFET, 130A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL1004PBF


This high-performance MOSFET employs Si technology and is designed for efficient power management in a variety of electronic applications. The enhancement mode N-channel structure ensures effective operation, making it suitable for modern automation and electrical systems, particularly in high power circuits.

Features & Benefits


• Continuous drain current capacity of up to 130A
• Maximum drain-source voltage of 40V ensuring robust performance
• Low Rds(on) of 7mΩ to decrease heat generation
• High thermal stability with a maximum operating temperature of +175°C
• Compact TO-220AB package allows for versatile mounting options

Applications


• High-efficiency power supply circuits
• Automotive and industrial automation systems
• Energy management and conversion systems

How does the Rds(on) contribute to the efficiency of the device?


A low Rds(on) of 7mΩ minimises power losses during operation, thereby reducing heat and enhancing overall efficiency in power applications.

What is the significance of the operating temperature range?


The device is capable of functioning within a wide temperature range of -55°C to +175°C, ensuring dependable performance across diverse environmental conditions and minimising the risk of thermal failure.

Can it be used for high-frequency switching applications?


Yes, it is designed for fast switching capabilities, making it suitable for high-frequency operations, thus improving performance in communication and control systems.

What considerations should be taken for installation?


Utilise appropriate thermal management techniques, such as a suitable heatsink, as high-power devices need effective heat dissipation to maintain functionality and reliability.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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