Infineon LogicFET Type N-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-220AB

RS Stock No.:: 919-4791
Mfr. Part No.:: IRL3803PBF
Brand:: Infineon

Infineon LogicFET Type N-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-220AB

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Subtotal (1 tube of 50 units)*

£64.40

(exc. VAT)

£77.30

(inc. VAT)

FREE delivery for orders over £50.00

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Units	Per unit	Per Tube*
50 - 50	£1.288	£64.40
100 - 200	£1.108	£55.40
250 - 450	£1.044	£52.20
500 - 950	£0.966	£48.30
1000 +	£0.902	£45.10

*price indicative

RS Stock No.:: 919-4791
Mfr. Part No.:: IRL3803PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	140A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TO-220AB
	Series	LogicFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	200W
	Typical Gate Charge Qg @ Vgs	140nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Width	4.69 mm
	Length	10.54mm
	Standards/Approvals	ANSI Y14.5M, 1982, JEDEC TO-220AB
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 140A
	Maximum Drain Source Voltage Vds 30V
	Package Type TO-220AB
	Series LogicFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 200W
	Typical Gate Charge Qg @ Vgs 140nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Width 4.69 mm
	Length 10.54mm
	Standards/Approvals ANSI Y14.5M, 1982, JEDEC TO-220AB
	Automotive Standard No

COO (Country of Origin):: MX

Infineon LogicFET Series MOSFET, 140A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL3803PBF

This N-channel MOSFET is intended for high efficiency in power applications, with a low Rds(on) making it suitable for various electronic and mechanical systems. Through advanced processing techniques, it provides exceptional reliability in challenging environments, operating within a temperature range of -55°C to +175°C. The component is capable of supporting high power dissipation needs, making it an essential element in automation and industrial applications.

Features & Benefits

• Fast switching speed enhances overall system performance

• High continuous drain current of 140A accommodates various applications

• Low maximum drain-source resistance reduces power loss

• Dual gate-source voltage ratings offer design flexibility

• Fully avalanche rated to maintain performance under stress

• Efficient thermal management with TO-220AB package design

Applications

• Used in power management circuits and motor control

• Suitable for industrial automation systems that require dependability

• Applied in switching power supplies for electronic devices

• Fit for renewable energy system

What are the maximum ratings for continuous drain current?

The maximum continuous drain current is 140A at 25°C and decreases to 98A at 100°C under standard conditions.

How does the component handle thermal management?

It incorporates low thermal resistance, allowing for power dissipation up to 200W, with a linear derating factor of 1.3 W/°C.

What is the significance of its enhancement mode?

The enhancement mode permits operation without substantial gate voltage, enabling efficient control over the switching mechanism, which is essential for low-power applications.

What specific voltage ratings does it support?

It accommodates a gate-to-source voltage range of ±16V and a maximum drain-source breakdown voltage of 30V, enhancing versatility in circuit designs.

Can it handle high temperature environments?

Yes, it operates efficiently in extreme conditions, with a junction temperature rating of up to +175°C.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today