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Infineon LogicFET N-Channel MOSFET, 104 A, 55 V, 3-Pin TO-220AB IRL2505PBF

RS Stock No.:: 543-1544
Distrelec Article No.:: 302-84-081
Mfr. Part No.:: IRL2505PBF
Brand:: Infineon

Infineon LogicFET N-Channel MOSFET, 104 A, 55 V, 3-Pin TO-220AB IRL2505PBF

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£2.47

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Units	Per unit
1 - 9	£2.06
10 - 49	£1.67
50 - 99	£1.57
100 - 249	£1.46
250 +	£1.36

*price indicative

RS Stock No.:: 543-1544
Distrelec Article No.:: 302-84-081
Mfr. Part No.:: IRL2505PBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	104 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-220AB
	Series	LogicFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Length	10.54mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	130 nC @ 5 V
	Width	4.69mm
	Height	8.77mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 104 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-220AB
	Series LogicFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Length 10.54mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 130 nC @ 5 V
	Width 4.69mm
	Height 8.77mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon LogicFET Series MOSFET, 104A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL2505PBF

This MOSFET is designed for high-performance applications that require efficient energy management. With a maximum continuous drain current of 104A and a drain-source voltage capability of up to 55V, it is a competitive option for the market. Its robust construction and advanced specifications make it suitable for various automation and electronic applications.

Features & Benefits

• Low on-resistance of 8mΩ reduces heat generation
• Maximum power dissipation of 200 W enhances performance
• Through-hole mounting style allows for easier integration
• Low gate charge requirement improves operational efficiency
• Enhancement mode design ensures performance in challenging conditions

Applications

• Power switching for effective control
• Motor driving circuits for speed and torque regulation
• Automated systems requiring high current management
• Power supplies and conversion circuits to maintain stable output
• Industrial machinery for enhanced power handling

What is the gate threshold voltage for use?

The gate threshold voltage is between 1V and 2V, providing flexibility for various applications.

How does temperature affect performance?

This device can operate effectively within a temperature range of -55°C to +175°C, making it suitable for harsh environmental conditions.

Can it handle pulsed current operations?

Yes, it can manage pulsed drain currents up to 360A, ensuring reliability during short-duration applications.

What level of voltage can be managed across the drain-source?

It supports a maximum voltage of 55V, which is ideal for most general-purpose applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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