Infineon LogicFET N-Channel MOSFET, 104 A, 55 V, 3-Pin TO-220AB IRL2505PBF
- RS Stock No.:
- 913-3869
- Mfr. Part No.:
- IRL2505PBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 913-3869
- Mfr. Part No.:
- IRL2505PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 104 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TO-220AB | |
Series | LogicFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 8 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 200 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 130 nC @ 5 V | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 104 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series LogicFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 130 nC @ 5 V | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon LogicFET Series MOSFET, 104A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL2505PBF
This MOSFET is designed for high-performance applications that require efficient energy management. With a maximum continuous drain current of 104A and a drain-source voltage capability of up to 55V, it is a competitive option for the market. Its robust construction and advanced specifications make it suitable for various automation and electronic applications.
Features & Benefits
• Low on-resistance of 8mΩ reduces heat generation
• Maximum power dissipation of 200 W enhances performance
• Through-hole mounting style allows for easier integration
• Low gate charge requirement improves operational efficiency
• Enhancement mode design ensures performance in challenging conditions
• Maximum power dissipation of 200 W enhances performance
• Through-hole mounting style allows for easier integration
• Low gate charge requirement improves operational efficiency
• Enhancement mode design ensures performance in challenging conditions
Applications
• Power switching for effective control
• Motor driving circuits for speed and torque regulation
• Automated systems requiring high current management
• Power supplies and conversion circuits to maintain stable output
• Industrial machinery for enhanced power handling
• Motor driving circuits for speed and torque regulation
• Automated systems requiring high current management
• Power supplies and conversion circuits to maintain stable output
• Industrial machinery for enhanced power handling
What is the gate threshold voltage for use?
The gate threshold voltage is between 1V and 2V, providing flexibility for various applications.
How does temperature affect performance?
This device can operate effectively within a temperature range of -55°C to +175°C, making it suitable for harsh environmental conditions.
Can it handle pulsed current operations?
Yes, it can manage pulsed drain currents up to 360A, ensuring reliability during short-duration applications.
What level of voltage can be managed across the drain-source?
It supports a maximum voltage of 55V, which is ideal for most general-purpose applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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