Infineon HEXFET N-Channel MOSFET, 23 A, 150 V, 3-Pin TO-220AB IRF3315PBF

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
542-9226
Mfr. Part No.:
IRF3315PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.54mm

Number of Elements per Chip

1

Transistor Material

Si

Width

4.69mm

Typical Gate Charge @ Vgs

95 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

8.77mm

Forward Diode Voltage

1.3V

The Infineon IRF3315 is the 150V single N-channel HEXFET power MOSFET in a TO-220AB package.

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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