Infineon HEXFET N-Channel MOSFET, 23 A, 150 V, 3-Pin TO-220AB IRF3315PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

150 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

95 nC @ 10 V

Width

4.69mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

10.54mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

8.77mm