Infineon HEXFET N-Channel MOSFET, 22 A, 55 V, 3-Pin TO-220 FP IRLIZ34NPBF

RS Stock No.:: 165-8101
Mfr. Part No.:: IRLIZ34NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 22 A, 55 V, 3-Pin TO-220 FP IRLIZ34NPBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 165-8101
Mfr. Part No.:: IRLIZ34NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	22 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	TO-220 FP
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation	37 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Length	10.6mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	25 nC @ 5 V
	Width	4.8mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	8.9mm
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 22 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type TO-220 FP
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation 37 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Length 10.6mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 25 nC @ 5 V
	Width 4.8mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 8.9mm
	Forward Diode Voltage 1.3V

COO (Country of Origin):: CN

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 22A Maximum Continuous Drain Current, 37W Maximum Power Dissipation - IRLIZ34NPBF

This MOSFET is crafted for high-efficiency applications and provides essential characteristics for professionals in automation and electronics. Its N-channel configuration operates in enhancement mode, making it suitable for a range of tasks. The design ensures robust performance in applications that require dependable switching and power management.

Features & Benefits

• Handles continuous drain current up to 22A for solid performance
• Operates at a drain-source voltage of 55V for versatile applications
• Low thermal resistance enhances heat dissipation
• Fast switching speeds improve system responsiveness
• High power dissipation capability supports stable operation
• Compact TO-220 package simplifies installation and maximises space

Applications

• High-power in electrical circuits
• Robotics and automation systems
• Power management for electronic devices
• Motor drives and inverters
• Power supply circuits for increased efficiency

How does this device perform under varying temperatures?

This MOSFET operates effectively from -55°C to +175°C, ensuring reliability in different environmental conditions.

What type of circuit configuration is compatible with it?

It is well-suited for circuits that require N-channel MOSFET functionality, effectively managing high current flows and voltage levels.

What are the implications of its gate threshold voltage?

With a gate threshold voltage between 1V and 2V, it allows for switching at low voltages, facilitating integration into control circuits.

How does thermal management influence its operation?

Efficient thermal management is crucial, enabling the device to maintain performance without overheating, especially in high-power or continuous applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.