Name: Infineon Single HEXFET 1 Type N-Channel MOSFET Enhancement, 3-Pin TO-220FP IRLIZ34NPBF
Brand: Infineon
SKU: 165-8101
Price: 0.29 GBP
Availability: Discontinued

Infineon HEXFET Series MOSFET, 22A Maximum Continuous Drain Current, 37W Maximum Power Dissipation - IRLIZ34NPBF

This MOSFET is crafted for high-efficiency applications and provides essential characteristics for professionals in automation and electronics. Its N-channel configuration operates in enhancement mode, making it suitable for a range of tasks. The design ensures robust performance in applications that require dependable switching and power management.

Features & Benefits

• Handles continuous drain current up to 22A for solid performance

• Operates at a drain-source voltage of 55V for versatile applications

• Low thermal resistance enhances heat dissipation

• Fast switching speeds improve system responsiveness

• High power dissipation capability supports stable operation

• Compact TO-220 package simplifies installation and maximises space

Applications

• High-power in electrical circuits

• Robotics and automation systems

• Power management for electronic devices

• Motor drives and inverters

• Power supply circuits for increased efficiency

How does this device perform under varying temperatures?

This MOSFET operates effectively from -55°C to +175°C, ensuring reliability in different environmental conditions.

What type of circuit configuration is compatible with it?

It is well-suited for circuits that require N-channel MOSFET functionality, effectively managing high current flows and voltage levels.

What are the implications of its gate threshold voltage?

With a gate threshold voltage between 1V and 2V, it allows for switching at low voltages, facilitating integration into control circuits.

How does thermal management influence its operation?

Efficient thermal management is crucial, enabling the device to maintain performance without overheating, especially in high-power or continuous applications.

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Series	HEXFET
	Package Type	TO-220FP
	Pin Count	3
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Transistor Configuration	Single
	Maximum Operating Temperature	175°C
	Width	4.8 mm
	Height	8.9mm
	Length	10.6mm
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Series HEXFET
	Package Type TO-220FP
	Pin Count 3
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Transistor Configuration Single
	Maximum Operating Temperature 175°C
	Width 4.8 mm
	Height 8.9mm
	Length 10.6mm
	Number of Elements per Chip 1

Infineon Single HEXFET 1 Type N-Channel MOSFET Enhancement, 3-Pin TO-220FP IRLIZ34NPBF