Infineon HEXFET N-Channel MOSFET, 355 A, 75 V, 3-Pin TO-247 IRFP7718PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

355 A

Maximum Drain Source Voltage

75 V

Series

HEXFET

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

517 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

552 nC @ 10 V

Width

5.31mm

Length

15.87mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V