Infineon Dual HEXFET 1 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8 AUIRF7103QTR
- RS Stock No.:
- 222-4608
- Mfr. Part No.:
- AUIRF7103QTR
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£12.37
(exc. VAT)
£14.84
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,270 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.237 | £12.37 |
| 100 - 240 | £1.175 | £11.75 |
| 250 - 490 | £1.126 | £11.26 |
| 500 - 990 | £1.076 | £10.76 |
| 1000 + | £1.002 | £10.02 |
*price indicative
- RS Stock No.:
- 222-4608
- Mfr. Part No.:
- AUIRF7103QTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 50V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 4 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
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