MPN

Infineon Dual HEXFET 1 Type N-Channel Power MOSFET, 10 A, 20 V Enhancement, 8-Pin SO-8 IRF8910TRPBF

RS Stock No.:: 215-2590
Mfr. Part No.:: IRF8910TRPBF
Brand:: Infineon

Infineon Dual HEXFET 1 Type N-Channel Power MOSFET, 10 A, 20 V Enhancement, 8-Pin SO-8 IRF8910TRPBF

Bulk discount available

Subtotal (1 pack of 25 units)*

£14.25

(exc. VAT)

£17.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 30 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 100	£0.57	£14.25
125 - 225	£0.542	£13.55
250 - 600	£0.519	£12.98
625 - 1225	£0.496	£12.40
1250 +	£0.462	£11.55

*price indicative

RS Stock No.:: 215-2590
Mfr. Part No.:: IRF8910TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	7.4nC
	Maximum Gate Source Voltage Vgs	20 V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Width	4 mm
	Length	5mm
	Height	1.5mm
	Standards/Approvals	No
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 20V
	Package Type SO-8
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 7.4nC
	Maximum Gate Source Voltage Vgs 20 V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Width 4 mm
	Length 5mm
	Height 1.5mm
	Standards/Approvals No
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet - IRF8910TRPBF

The Infineon HEXFET Power MOSFET has 20V maximum drain source voltage in a SO-8 package. It has application as dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box.

Lead-Free

Low RDS(on)

Ultra-Low Gate Impedance

Dual N-Channel MOSFET