Infineon HEXFET N-Channel MOSFET, 10 A, 20 V, 8-Pin SO-8 IRF8910TRPBF

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Subtotal (1 pack of 25 units)*

£14.25

(exc. VAT)

£17.00

(inc. VAT)

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  • Shipping from 01 January 2026
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Units
Per unit
Per Pack*
25 - 100£0.57£14.25
125 - 225£0.542£13.55
250 - 600£0.519£12.98
625 - 1225£0.496£12.40
1250 +£0.462£11.55

*price indicative

Packaging Options:
RS Stock No.:
215-2590
Mfr. Part No.:
IRF8910TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

20 V

Package Type

SO-8

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0134 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.55V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET Power MOSFET has 20V maximum drain source voltage in a SO-8 package. It has application as dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box.

Lead-Free
Low RDS(on)
Ultra-Low Gate Impedance
Dual N-Channel MOSFET

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