Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays, 21 A, 30 V Enhancement, 8-Pin SO-8

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
215-2584
Mfr. Part No.:
IRF7831TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET Arrays

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

40nC

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

5mm

Height

1.5mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application high frequency point-of-load synchronous buck converter for applications in networking & computing systems.

RoHS Compliant

Industry-leading quality

Low RDS(ON) at 4.5V VGS

Fully Characterized Avalanche Voltage and Current

Ultra-Low Gate Impedance

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