Infineon HEXFET N-Channel MOSFET, 21 A, 30 V, 8-Pin SO-8 IRF7831TRPBF

View all MOSFETs

Subtotal (1 reel of 4000 units)*

£1,516.00

(exc. VAT)

£1,820.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 26 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +£0.379£1,516.00

*price indicative

RS Stock No.:
215-2584
Mfr. Part No.:
IRF7831TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application high frequency point-of-load synchronous buck converter for applications in networking & computing systems.

RoHS Compliant
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links