MPN

Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays, 21 A, 30 V Enhancement, 8-Pin SO-8

RS Stock No.:: 215-2584
Mfr. Part No.:: IRF7831TRPBF
Brand:: Infineon

Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays, 21 A, 30 V Enhancement, 8-Pin SO-8

Subtotal (1 reel of 4000 units)*

£1,516.00

(exc. VAT)

£1,820.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 22 November 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
4000 +	£0.379	£1,516.00

*price indicative

RS Stock No.:: 215-2584
Mfr. Part No.:: IRF7831TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET Arrays
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	40nC
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±12 V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	4 mm
	Length	5mm
	Height	1.5mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET Arrays
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 40nC
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±12 V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 4 mm
	Length 5mm
	Height 1.5mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet - IRF7831TRPBF

The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application high frequency point-of-load synchronous buck converter for applications in networking & computing systems.

RoHS Compliant

Industry-leading quality

Low RDS(ON) at 4.5V VGS

Fully Characterized Avalanche Voltage and Current

Ultra-Low Gate Impedance