Infineon HEXFET N-Channel MOSFET, 6.6 A, 20 V, 8-Pin SO-8 IRF7311TRPBF

Subtotal (1 reel of 4000 units)*

£1,772.00

(exc. VAT)

£2,128.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 999,996,000 unit(s) shipping from 08 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +£0.443£1,772.00

*price indicative

RS Stock No.:
215-2582
Mfr. Part No.:
IRF7311TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.6 A

Maximum Drain Source Voltage

20 V

Series

HEXFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.029 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.7V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.

Generation V technology
Ultra low on resistance
Surface mount
Fully avalanche rated
Dual N-channel MOSFET

Related links