MPN

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8

RS Stock No.:: 223-8452
Mfr. Part No.:: AUIRF7341QTR
Brand:: Infineon

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8

Subtotal (1 reel of 4000 units)*

£2,688.00

(exc. VAT)

£3,224.00

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 12,000 unit(s), ready to ship

Units	Per unit	Per Reel*
4000 +	£0.672	£2,688.00

*price indicative

RS Stock No.:: 223-8452
Mfr. Part No.:: AUIRF7341QTR
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.1A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	3 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	29nC
	Maximum Operating Temperature	175°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Length	5mm
	Width	4 mm
	Height	1.5mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.1A
	Maximum Drain Source Voltage Vds 55V
	Package Type SO-8
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 3 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 29nC
	Maximum Operating Temperature 175°C
	Transistor Configuration Dual
	Standards/Approvals No
	Length 5mm
	Width 4 mm
	Height 1.5mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - AUIRF7341QTR

The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.

Advanced planar technology

Dynamic dV/dT rating

Logic level gate drive

175°C operating temperature

Fast switching

Lead free

RoHS compliant

Automotive qualified