Infineon HEXFET Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO-8 AUIRF7341QTR

Subtotal (1 reel of 4000 units)*

£2,688.00

(exc. VAT)

£3,224.00

(inc. VAT)

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RS Stock No.:
223-8452
Mfr. Part No.:
AUIRF7341QTR
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.5 Ω

Maximum Gate Threshold Voltage

3V

Transistor Material

Si

Number of Elements per Chip

2

The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.

Advanced planar technology
Dynamic dV/dT rating
Logic level gate drive
175°C operating temperature
Fast switching
Lead free
RoHS compliant
Automotive qualified

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