Infineon Dual HEXFET 2 Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin PQFN

Subtotal (1 reel of 4000 units)*

£3,208.00

(exc. VAT)

£3,848.00

(inc. VAT)

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4000 +£0.802£3,208.00

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RS Stock No.:
229-1739
Mfr. Part No.:
AUIRFN8459TR
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

50W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Width

5.85 mm

Height

1.2mm

Standards/Approvals

No

Length

5mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon dual n channel HEXFET power MOSFET in a PQFN 5 x 6 L package allows repetitive avalanche up to Tjmax. It has fast switching speed and it is lead free.

It is RoHS compliant

It has 175°C operating temperature

It has ultra low on resistance

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