Infineon HEXFET Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC IRF9362TRPBF

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Typical Gate Charge @ Vgs

26 nC @ 15 V

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V