Infineon HEXFET Dual N-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC IRL6372TRPBF

Subtotal (1 reel of 4000 units)*

£940.00

(exc. VAT)

£1,128.00

(inc. VAT)

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4000 +£0.235£940.00

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RS Stock No.:
168-6026
Mfr. Part No.:
IRL6372TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.1 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

11 nC @ 15 V

Maximum Operating Temperature

+150 °C

Length

5mm

Number of Elements per Chip

2

Width

4mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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