Infineon HEXFET Dual N-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC IRL6372TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.1 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

11 nC @ 15 V

Maximum Operating Temperature

+150 °C

Width

4mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.5mm