Infineon HEXFET Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V, 8-Pin SOIC IRF7907TRPBF
- RS Stock No.:
- 168-5975
- Mfr. Part No.:
- IRF7907TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)*
£1,336.00
(exc. VAT)
£1,604.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £0.334 | £1,336.00 |
*price indicative
- RS Stock No.:
- 168-5975
- Mfr. Part No.:
- IRF7907TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.1 A, 11 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 13.7 mΩ, 20.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 14 nC @ 4.5 V, 6.7 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4mm | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.1 A, 11 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13.7 mΩ, 20.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 14 nC @ 4.5 V, 6.7 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Height 1.5mm | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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