Infineon HEXFET Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V, 8-Pin SOIC IRF7907TRPBF

Subtotal (1 reel of 4000 units)*

£1,336.00

(exc. VAT)

£1,604.00

(inc. VAT)

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4000 +£0.334£1,336.00

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RS Stock No.:
168-5975
Mfr. Part No.:
IRF7907TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.1 A, 11 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.7 mΩ, 20.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

4mm

Length

5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

14 nC @ 4.5 V, 6.7 nC @ 4.5 V

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

1.5mm

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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