MPN

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 AUIRF7341QTR

RS Stock No.:: 223-8453
Mfr. Part No.:: AUIRF7341QTR
Brand:: Infineon

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 AUIRF7341QTR

Bulk discount available

Subtotal (1 pack of 10 units)*

£16.10

(exc. VAT)

£19.30

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 15,320 unit(s), ready to ship

Units	Per unit	Per Pack*
10 - 40	£1.61	£16.10
50 - 90	£1.53	£15.30
100 - 240	£1.465	£14.65
250 - 490	£1.401	£14.01
500 +	£1.304	£13.04

*price indicative

RS Stock No.:: 223-8453
Mfr. Part No.:: AUIRF7341QTR
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.1A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SO-8
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	3 V
	Typical Gate Charge Qg @ Vgs	29nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Height	1.5mm
	Length	5mm
	Width	4 mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.1A
	Maximum Drain Source Voltage Vds 55V
	Package Type SO-8
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 3 V
	Typical Gate Charge Qg @ Vgs 29nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Height 1.5mm
	Length 5mm
	Width 4 mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - AUIRF7341QTR

The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.

Advanced planar technology

Dynamic dV/dT rating

Logic level gate drive

175°C operating temperature

Fast switching

Lead free

RoHS compliant

Automotive qualified