Infineon HEXFET Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO-8 AUIRF7341QTR
- RS Stock No.:
- 223-8453
- Mfr. Part No.:
- AUIRF7341QTR
- Brand:
- Infineon
Save 19% when you buy 500 units
Subtotal (1 pack of 10 units)*
£16.10
(exc. VAT)
£19.30
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 15,330 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £1.61 | £16.10 |
50 - 90 | £1.53 | £15.30 |
100 - 240 | £1.465 | £14.65 |
250 - 490 | £1.401 | £14.01 |
500 + | £1.304 | £13.04 |
*price indicative
- RS Stock No.:
- 223-8453
- Mfr. Part No.:
- AUIRF7341QTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 5.1 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | SO-8 | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.5 Ω | |
Maximum Gate Threshold Voltage | 3V | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.1 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.5 Ω | ||
Maximum Gate Threshold Voltage 3V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
Advanced planar technology
Dynamic dV/dT rating
Logic level gate drive
175°C operating temperature
Fast switching
Lead free
RoHS compliant
Automotive qualified
Dynamic dV/dT rating
Logic level gate drive
175°C operating temperature
Fast switching
Lead free
RoHS compliant
Automotive qualified
Related links
- Infineon HEXFET Dual N-Channel MOSFET 55 V, 8-Pin SO-8 AUIRF7341QTR
- Infineon HEXFET Dual N-Channel MOSFET 55 V, 8-Pin SO-8 IRF7341GTRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 55 V, 4-Pin SOT-223 IRFL024ZTRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK IRFR1010ZTRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK AUIRFR48ZTRL
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 100 V, 8-Pin SO-8 IRF7490TRPBF
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 55 V, 8-Pin SOIC AUIRF7343QTR
- Infineon HEXFET Dual N-Channel MOSFET 80 V, 8-Pin SOIC IRF7380TRPBF