Infineon HEXFET Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO-8 AUIRF7341QTR

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Subtotal (1 pack of 10 units)*

£16.10

(exc. VAT)

£19.30

(inc. VAT)

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  • Final 15,330 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 40£1.61£16.10
50 - 90£1.53£15.30
100 - 240£1.465£14.65
250 - 490£1.401£14.01
500 +£1.304£13.04

*price indicative

Packaging Options:
RS Stock No.:
223-8453
Mfr. Part No.:
AUIRF7341QTR
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

55 V

Package Type

SO-8

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.5 Ω

Maximum Gate Threshold Voltage

3V

Transistor Material

Si

Number of Elements per Chip

2

The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.

Advanced planar technology
Dynamic dV/dT rating
Logic level gate drive
175°C operating temperature
Fast switching
Lead free
RoHS compliant
Automotive qualified

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