Infineon HEXFET Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO-8 IRF7341GTRPBF
- RS Stock No.:
- 217-2601
- Mfr. Part No.:
- IRF7341GTRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)*
£2,256.00
(exc. VAT)
£2,708.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £0.564 | £2,256.00 |
*price indicative
- RS Stock No.:
- 217-2601
- Mfr. Part No.:
- IRF7341GTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.1 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 65 mO | |
| Maximum Gate Threshold Voltage | 1V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.1 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 65 mO | ||
Maximum Gate Threshold Voltage 1V | ||
Number of Elements per Chip 2 | ||
The Infineon HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
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