Infineon HEXFET Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO-8 IRF7341GTRPBF

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Subtotal (1 pack of 10 units)*

£9.78

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£11.74

(inc. VAT)

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10 - 40£0.978£9.78
50 - 90£0.929£9.29
100 - 240£0.89£8.90
250 - 490£0.851£8.51
500 +£0.792£7.92

*price indicative

Packaging Options:
RS Stock No.:
217-2603
Mfr. Part No.:
IRF7341GTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mO

Maximum Gate Threshold Voltage

1V

Number of Elements per Chip

2

The Infineon HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

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