Infineon HEXFET Dual N-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC IRL6372TRPBF
- RS Stock No.:
- 130-1013
- Mfr. Part No.:
- IRL6372TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£7.55
(exc. VAT)
£9.05
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 15,225 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.302 | £7.55 |
| 125 - 225 | £0.242 | £6.05 |
| 250 - 600 | £0.226 | £5.65 |
| 625 - 1225 | £0.208 | £5.20 |
| 1250 + | £0.203 | £5.08 |
*price indicative
- RS Stock No.:
- 130-1013
- Mfr. Part No.:
- IRL6372TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.1 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 2 W | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Number of Elements per Chip | 2 | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 11 nC @ 15 V | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.1 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 2 W | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Number of Elements per Chip 2 | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 11 nC @ 15 V | ||
Height 1.5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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