Infineon HEXFET Dual N-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC IRL6372TRPBF

Save 32% when you buy 1250 units

Subtotal (1 pack of 25 units)*

£7.55

(exc. VAT)

£9.05

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100£0.302£7.55
125 - 225£0.242£6.05
250 - 600£0.226£5.65
625 - 1225£0.208£5.20
1250 +£0.203£5.08

*price indicative

Packaging Options:
RS Stock No.:
130-1013
Mfr. Part No.:
IRL6372TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.1 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Width

4mm

Typical Gate Charge @ Vgs

11 nC @ 15 V

Length

5mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Forward Diode Voltage

1.2V

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