Infineon HEXFET N-Channel MOSFET, 355 A, 75 V, 3-Pin TO-247 IRFP7718PBF
- RS Stock No.:
- 879-3325
- Mfr. Part No.:
- IRFP7718PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£12.46
(exc. VAT)
£14.96
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 4 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £6.23 | £12.46 |
| 10 - 18 | £5.605 | £11.21 |
| 20 - 48 | £5.235 | £10.47 |
| 50 - 98 | £4.86 | £9.72 |
| 100 + | £4.545 | £9.09 |
*price indicative
- RS Stock No.:
- 879-3325
- Mfr. Part No.:
- IRFP7718PBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 355 A | |
| Maximum Drain Source Voltage | 75 V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 517 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 5.31mm | |
| Typical Gate Charge @ Vgs | 552 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 15.87mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.7mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 355 A | ||
Maximum Drain Source Voltage 75 V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 517 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 5.31mm | ||
Typical Gate Charge @ Vgs 552 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 15.87mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 20.7mm | ||
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