Infineon HEXFET N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK IRF2807ZSTRLPBF

RS Stock No.:: 831-2806
Mfr. Part No.:: IRF2807ZSTRLPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK IRF2807ZSTRLPBF

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Subtotal (1 pack of 10 units)*

£16.15

(exc. VAT)

£19.38

(inc. VAT)

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Last RS stock

Final 40 unit(s), ready to ship

Units	Per unit	Per Pack*
10 - 40	£1.615	£16.15
50 - 90	£1.292	£12.92
100 - 240	£1.211	£12.11
250 - 490	£1.114	£11.14
500 +	£1.035	£10.35

*price indicative

RS Stock No.:: 831-2806
Mfr. Part No.:: IRF2807ZSTRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	89 A
	Maximum Drain Source Voltage	75 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	9.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	170 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	9.65mm
	Length	10.67mm
	Typical Gate Charge @ Vgs	71 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Height	4.83mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 89 A
	Maximum Drain Source Voltage 75 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 9.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 170 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 9.65mm
	Length 10.67mm
	Typical Gate Charge @ Vgs 71 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Height 4.83mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF2807ZSTRLPBF

This MOSFET is designed for high-performance switching applications, offering efficiency and reliability across various electronic circuits. Its low on-resistance and strong thermal characteristics make it essential for users in automation, electrical, and mechanical sectors, enabling effective power management and reduced energy loss.

Features & Benefits

• Continuous drain current up to 89A
• Maximum drain-source voltage of 75V
• Operating temperature up to +175°C for thermal stability
• Low Rds(on) of 9.4 mΩ to reduce power loss
• Quick switching abilities enhance system responsiveness
• Enhancement mode device for optimal operation

Applications

• Used in power supply circuits for efficient energy conversion
• Employed in automotive and industrial systems for motor control
• Suitable for DC-DC converters and switching regulators
• Applicable in high-frequency switching in electronics
• Utilised for overload protection in various electrical systems

What is the maximum gate-source voltage this component can handle?

It can manage a maximum gate-source voltage of ±20V, ensuring compatibility with diverse control signals.

How does this component perform under high temperatures?

With a maximum operating temperature of +175°C, it remains stable and functional in high-temperature environments, making it suitable for such applications.

What is the purpose of the low on-resistance feature?

The low on-resistance minimises heat generation and enhances efficiency during operation, which is important for high current applications.

Can it be used in both surface mount and through-hole designs?

This device is specifically designed for surface mount technology in a D2PAK package, optimising space and thermal performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.