Infineon HEXFET N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK IRF2807ZSTRLPBF
- RS Stock No.:
- 831-2806
- Mfr. Part No.:
- IRF2807ZSTRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£16.15
(exc. VAT)
£19.38
(inc. VAT)
FREE delivery for orders over £50.00
- Final 50 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £1.615 | £16.15 |
50 - 90 | £1.292 | £12.92 |
100 - 240 | £1.211 | £12.11 |
250 - 490 | £1.114 | £11.14 |
500 + | £1.035 | £10.35 |
*price indicative
- RS Stock No.:
- 831-2806
- Mfr. Part No.:
- IRF2807ZSTRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 89 A | |
Maximum Drain Source Voltage | 75 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 170 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 9.65mm | |
Transistor Material | Si | |
Length | 10.67mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
Height | 4.83mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 89 A | ||
Maximum Drain Source Voltage 75 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 170 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Transistor Material Si | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Height 4.83mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 60V to 80V, Infineon
Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF2807ZSTRLPBF
Features & Benefits
• Maximum drain-source voltage of 75V
• Operating temperature up to +175°C for thermal stability
• Low Rds(on) of 9.4 mΩ to reduce power loss
• Quick switching abilities enhance system responsiveness
• Enhancement mode device for optimal operation
Applications
• Employed in automotive and industrial systems for motor control
• Suitable for DC-DC converters and switching regulators
• Applicable in high-frequency switching in electronics
• Utilised for overload protection in various electrical systems
What is the maximum gate-source voltage this component can handle?
How does this component perform under high temperatures?
What is the purpose of the low on-resistance feature?
Can it be used in both surface mount and through-hole designs?
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