Infineon HEXFET Dual Silicon N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB IRF2807ZPBF
- RS Stock No.:
- 262-6725
- Mfr. Part No.:
- IRF2807ZPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 1000 units)*
£714.00
(exc. VAT)
£857.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 January 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 1000 - 1000 | £0.714 | £714.00 |
| 2000 + | £0.679 | £679.00 |
*price indicative
- RS Stock No.:
- 262-6725
- Mfr. Part No.:
- IRF2807ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
Repetitive avalanche allowed up to Tjmax
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