Infineon HEXFET N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB IRFB3607PBF
- RS Stock No.:
- 688-6923
- Mfr. Part No.:
- IRFB3607PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.36
(exc. VAT)
£4.03
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 80 unit(s) ready to ship
- Plus 5 unit(s) ready to ship from another location
- Plus 425 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.672 | £3.36 |
| 50 - 120 | £0.45 | £2.25 |
| 125 - 245 | £0.416 | £2.08 |
| 250 - 495 | £0.39 | £1.95 |
| 500 + | £0.364 | £1.82 |
*price indicative
- RS Stock No.:
- 688-6923
- Mfr. Part No.:
- IRFB3607PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 75 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.66mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 56 nC @ 10 V | |
| Width | 4.82mm | |
| Transistor Material | Si | |
| Height | 9.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 75 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.66mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 56 nC @ 10 V | ||
Width 4.82mm | ||
Transistor Material Si | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
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