Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin IPAK

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Subtotal (1 pack of 5 units)*

£7.48

(exc. VAT)

£8.975

(inc. VAT)

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5 +£1.496£7.48

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RS Stock No.:
688-7134
Mfr. Part No.:
IRFU3607PBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Package Type

IPAK

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

56nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

140W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

6.22mm

Length

6.73mm

Width

2.39 mm

Distrelec Product Id

304-43-455

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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