Infineon HEXFET N-Channel MOSFET, 80 A, 75 V, 3-Pin IPAK IRFU3607PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Package Type

IPAK (TO-251)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.39mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

6.73mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

6.22mm