Infineon HEXFET N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK IRLU8743PBF

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RS Stock No.:
124-8964
Mfr. Part No.:
IRLU8743PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

30 V

Package Type

IPAK (TO-251)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

135 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

39 nC @ 4.5 V

Transistor Material

Si

Length

6.73mm

Maximum Operating Temperature

+175 °C

Width

2.39mm

Height

6.22mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLU8743PBF


This MOSFET is an enhancement mode device designed for efficient switching applications. It utilises advanced technology to perform well in high-frequency operations, making it suitable for power management in various industrial scenarios. With impressive specifications, it effectively manages significant current loads while maintaining low resistance, ensuring performance in various conditions.

Features & Benefits


• Low on-resistance reduces power loss during operation
• High continuous drain current of 160A supports substantial loads
• Voltage range up to 30V facilitates diverse applications
• Designed with an IPAK TO-251 package for straightforward installation
• Fully characterised avalanche capabilities enhance operational reliability

Applications


• High-frequency synchronous buck converters
• Isolated DC-DC converters in industrial environments
• Computer processor power management systems
• High current power supply

How does it perform in high-temperature environments?


The device operates within a temperature range of -55°C to +175°C, ensuring consistent performance in extreme conditions.

What is the significance of low RDS(on) for my design?


A low RDS(on) value minimises conduction losses, promoting efficient energy use and effective thermal management, which is essential for high-current applications.

Can it be used in pulse applications?


Yes, its design supports pulsed current handling, making it suitable for various applications requiring transient response.

What factors should I consider during installation?


It is important to ensure proper thermal management and verify compatibility with the circuit's voltage and current specifications to optimise performance.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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