Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBF

RS Stock No.:: 543-0591
Mfr. Part No.:: IRLU024NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBF

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Units	Per unit
1 - 24	£0.67
25 - 49	£0.64
50 - 99	£0.61
100 - 249	£0.57
250 +	£0.54

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RS Stock No.:: 543-0591
Mfr. Part No.:: IRLU024NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	17 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	IPAK (TO-251)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	65 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	45 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Typical Gate Charge @ Vgs	15 nC @ 5 V
	Width	2.39mm
	Maximum Operating Temperature	+175 °C
	Length	6.73mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	6.22mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 17 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type IPAK (TO-251)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 65 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 45 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Typical Gate Charge @ Vgs 15 nC @ 5 V
	Width 2.39mm
	Maximum Operating Temperature +175 °C
	Length 6.73mm
	Number of Elements per Chip 1
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 6.22mm

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRLU024NPBF

This MOSFET is a high-performance power device designed specifically for demanding applications within the electrical and mechanical industries. It features an enhancement mode configuration and operates effectively within a temperature range of -55°C to +175°C. With compact dimensions of 6.73mm in length, 2.39mm in width, and 6.22mm in height, it can be easily integrated into various electronic setups.

Features & Benefits

• Achieves a maximum continuous drain current of 17A
• Offers a maximum drain-source voltage of 55V
• Supports a maximum power dissipation of 45W
• Rugged design suitable for high-temperature applications
• Compatible with through-hole mounting for versatile installation

Applications

• Used in motor control systems for precise regulation
• Suitable for switch-mode power supplies for efficient energy conversion
• Effective in industrial automation equipment for reliable performance
• Utilised in consumer electronics for improved power management
• Ideal for power management circuits requiring high current

What is the significance of the on-resistance in this device?

The low Rds(on) of 65mΩ ensures minimal energy loss during operation, enhancing the overall efficiency of circuits designed using this specific device. This characteristic also supports the capacity for higher current without overheating issues in electronic applications.

How does this MOSFET perform in high-temperature environments?

This device is engineered to function reliably in temperatures ranging from -55°C to +175°C, making it suitable for environments that experience significant thermal stress, such as industrial machinery and automotive applications.

Can it handle pulsed drain currents?

Yes, the device supports pulsed drain currents up to 72A, providing flexibility in various dynamic switching applications where short bursts of high current are necessary.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.