MPN

Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRFU024NPBF

RS Stock No.:: 168-6296
Mfr. Part No.:: IRFU024NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRFU024NPBF

Bulk discount available

Subtotal (1 tube of 75 units)*

£26.175

(exc. VAT)

£31.425

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 09 July 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
75 - 75	£0.349	£26.18
150 - 300	£0.272	£20.40
375 - 675	£0.255	£19.13
750 - 1425	£0.249	£18.68
1500 +	£0.243	£18.23

*price indicative

RS Stock No.:: 168-6296
Mfr. Part No.:: IRFU024NPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	17 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	IPAK (TO-251)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	75 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	45 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	20 nC @ 10 V
	Length	6.73mm
	Maximum Operating Temperature	+175 °C
	Width	2.39mm
	Height	6.22mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 17 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type IPAK (TO-251)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 75 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 45 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 20 nC @ 10 V
	Length 6.73mm
	Maximum Operating Temperature +175 °C
	Width 2.39mm
	Height 6.22mm
	Minimum Operating Temperature -55 °C

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFU024NPBF

This high-performance N-channel MOSFET is suitable for various electrical applications. With specifications including a maximum continuous drain current of 17A and a maximum drain-source voltage of 55V, this component is important for professionals in the automation and electronics fields. Its capability to operate in high-temperature environments contributes to its reliability for demanding projects.

Features & Benefits

• Maximum power dissipation of up to 45W for robust operation
• Low drain-source resistance of 75mΩ enhances energy efficiency
• Maximum gate threshold of 4V for improved performance
• Single transistor configuration simplifies design integration
• Designed for through-hole mounting in a TO-251 package for easy installation

Applications

• Used in power management systems for enhanced efficiency
• Ideal for high-frequency switching
• Suitable for automotive electronics ensuring consistent performance
• Employed in industrial automation for control systems
• Appropriate for telecommunications to maintain signal integrity

What is the maximum continuous drain current supported?

The maximum continuous drain current supported is 17A, making it suitable for various applications requiring significant power handling.

How does temperature affect performance?

The component operates effectively within a wide temperature range from -55°C to +175°C, ensuring stability under extreme conditions.

Can it handle varying gate-source voltages?

Yes, it can accommodate gate-source voltages from -20 V to +20 V, providing flexibility in circuit design.

What are the implications of low drain-source resistance?

A low drain-source resistance of 75mΩ leads to reduced heat generation and improved efficiency, which is crucial for high-performance applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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