Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRFU024NPBF

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Subtotal (1 tube of 75 units)*

£26.175

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£31.425

(inc. VAT)

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75 - 75£0.349£26.18
150 - 300£0.272£20.40
375 - 675£0.255£19.13
750 - 1425£0.249£18.68
1500 +£0.243£18.23

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RS Stock No.:
168-6296
Mfr. Part No.:
IRFU024NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

55 V

Package Type

IPAK (TO-251)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

2.39mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

6.22mm

COO (Country of Origin):
MX

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFU024NPBF


This high-performance N-channel MOSFET is suitable for various electrical applications. With specifications including a maximum continuous drain current of 17A and a maximum drain-source voltage of 55V, this component is important for professionals in the automation and electronics fields. Its capability to operate in high-temperature environments contributes to its reliability for demanding projects.

Features & Benefits


• Maximum power dissipation of up to 45W for robust operation
• Low drain-source resistance of 75mΩ enhances energy efficiency
• Maximum gate threshold of 4V for improved performance
• Single transistor configuration simplifies design integration
• Designed for through-hole mounting in a TO-251 package for easy installation

Applications


• Used in power management systems for enhanced efficiency
• Ideal for high-frequency switching
• Suitable for automotive electronics ensuring consistent performance
• Employed in industrial automation for control systems
• Appropriate for telecommunications to maintain signal integrity

What is the maximum continuous drain current supported?


The maximum continuous drain current supported is 17A, making it suitable for various applications requiring significant power handling.

How does temperature affect performance?


The component operates effectively within a wide temperature range from -55°C to +175°C, ensuring stability under extreme conditions.

Can it handle varying gate-source voltages?


Yes, it can accommodate gate-source voltages from -20 V to +20 V, providing flexibility in circuit design.

What are the implications of low drain-source resistance?


A low drain-source resistance of 75mΩ leads to reduced heat generation and improved efficiency, which is crucial for high-performance applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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