Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRFU024NPBF
- RS Stock No.:
- 541-1607
- Mfr. Part No.:
- IRFU024NPBF
- Brand:
- Infineon
Subtotal (1 unit)*
£0.68
(exc. VAT)
£0.82
(inc. VAT)
FREE delivery for orders over £50.00
- 54 unit(s) shipping from 30 October 2025
Units | Per unit |
---|---|
1 - 24 | £0.68 |
25 - 49 | £0.65 |
50 - 99 | £0.62 |
100 - 249 | £0.58 |
250 + | £0.55 |
*price indicative
- RS Stock No.:
- 541-1607
- Mfr. Part No.:
- IRFU024NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 17 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | IPAK (TO-251) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 75 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 45 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
Width | 2.39mm | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Height | 6.22mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Width 2.39mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Height 6.22mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 55V, Infineon

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFU024NPBF
Features & Benefits
• Low drain-source resistance of 75mΩ enhances energy efficiency
• Maximum gate threshold of 4V for improved performance
• Single transistor configuration simplifies design integration
• Designed for through-hole mounting in a TO-251 package for easy installation
Applications
• Ideal for high-frequency switching
• Suitable for automotive electronics ensuring consistent performance
• Employed in industrial automation for control systems
• Appropriate for telecommunications to maintain signal integrity
What is the maximum continuous drain current supported?
How does temperature affect performance?
Can it handle varying gate-source voltages?
What are the implications of low drain-source resistance?
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