Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin IPAK IRFU9024NPBF
- RS Stock No.:
- 919-4911
- Mfr. Part No.:
- IRFU9024NPBF
- Brand:
- Infineon
Subtotal (1 tube of 75 units)*
£42.225
(exc. VAT)
£50.70
(inc. VAT)
FREE delivery for orders over £50.00
- 75 unit(s) ready to ship
- Plus 3,000 unit(s) shipping from 27 November 2025
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | £0.563 | £42.23 |
| 150 - 300 | £0.468 | £35.10 |
| 375 - 675 | £0.434 | £32.55 |
| 750 - 1800 | £0.406 | £30.45 |
| 1875 + | £0.377 | £28.28 |
*price indicative
- RS Stock No.:
- 919-4911
- Mfr. Part No.:
- IRFU9024NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | IPAK (TO-251) | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 175 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 38 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Width | 2.39mm | |
| Height | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type IPAK (TO-251) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 175 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 38 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.73mm | ||
Transistor Material Si | ||
Width 2.39mm | ||
Height 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFU9024NPBF
Features & Benefits
• Maximum power dissipation of 38W supports robust performance
• Single transistor configuration simplifies design processes
• Complies with lead-free standards for environmentally conscious applications
Applications
• Utilised in motor control systems for effective operation
• Integrated into battery management systems for improved performance
• Applicable in automotive environments for dependable power handling
• Ideal for industrial automation equipment requiring robust performance
What is the temperature range for stable operation?
How can it handle high power loads efficiently?
Is it compatible with a standard PCB layout?
What criteria should be considered for gate voltage?
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