MPN

Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin IPAK IRFU5305PBF

RS Stock No.:: 542-9951
Distrelec Article No.:: 303-41-378
Mfr. Part No.:: IRFU5305PBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin IPAK IRFU5305PBF

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£0.82

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£0.98

(inc. VAT)

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In Stock

9 unit(s) ready to ship
Plus 145 unit(s) shipping from 12 September 2025
Plus 3,000 unit(s) shipping from 01 October 2025

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Units	Per unit
1 +	£0.82

*price indicative

RS Stock No.:: 542-9951
Distrelec Article No.:: 303-41-378
Mfr. Part No.:: IRFU5305PBF
Brand:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFU5305PBF

This MOSFET is engineered for efficiency and reliability across diverse electronic applications. The advanced processing techniques incorporated enable low resistance per silicon area, making it suitable for high-performance circuit designs. Its robust capabilities accommodate a wide array of drain current and voltage specifications, ensuring optimal use in automation and electrical systems.

Features & Benefits

• High current handling capability of up to 31A
• Operates effectively in enhancement mode for improved performance
• Low static drain-to-source on-resistance for efficient energy consumption
• Broad gate-to-source voltage range of ±20V for versatile control
• Can withstand power dissipation levels up to 110W
• Compact TO-251 IPAK package facilitates space-efficient installation

Applications

• Ideal for power management in consumer electronics
• Employed in renewable energy systems for efficient control
• Suitable for power in electric vehicles
• Utilised in high-frequency switching power supplies for enhanced performance

What operating temperature range can be maintained?

The component can operate within -55°C to +175°C, suitable for various environments.

How does installation affect performance?

Proper installation in space-constrained applications optimises heat dissipation, thus enhancing reliability and performance.

What should be considered for heat management during use?

Ensuring adequate cooling methods is crucial due to its maximum power dissipation of 110 W when operating at high drain currents.

What type of circuit designs benefit from its specifications?

The low on-resistance and high current rating make it well-suited for designs focused on efficiency and minimising energy losses in applications such as motor control and power supplies.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	IPAK (TO-251)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	65 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Length	6.6mm
	Number of Elements per Chip	1
	Width	2.3mm
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C
	Height	6.1mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type IPAK (TO-251)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 65 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Length 6.6mm
	Number of Elements per Chip 1
	Width 2.3mm
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C
	Height 6.1mm

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