Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB IRF5305PBF
- RS Stock No.:
- 919-4924
- Mfr. Part No.:
- IRF5305PBF
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£36.55
(exc. VAT)
£43.85
(inc. VAT)
FREE delivery for orders over £50.00
- 300 unit(s) ready to ship
- Plus 500 unit(s) shipping from 08 October 2025
Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.731 | £36.55 |
100 - 200 | £0.57 | £28.50 |
250 - 450 | £0.533 | £26.65 |
500 - 1200 | £0.497 | £24.85 |
1250 + | £0.46 | £23.00 |
*price indicative
- RS Stock No.:
- 919-4924
- Mfr. Part No.:
- IRF5305PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 31 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 4.69mm | |
Maximum Operating Temperature | +175 °C | |
Length | 10.54mm | |
Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Height | 8.77mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.69mm | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305PBF
Features & Benefits
• Voltage rating of 55V facilitates dependable switching
• Low on-resistance of 60mΩ reduces power loss
• TO-220AB package design enhances thermal performance
• Gate-source voltage range of ±20V accommodates diverse applications
• Rapid switching optimisation boosts overall system efficiency
Applications
• Applicable in power supply circuits for stable performance
• Integrated into electronic devices requiring effective switching capabilities
• Suitable for deployment in renewable energy systems
What is the temperature range for operation?
How does the package type affect performance?
Can it handle pulsed drain current applications?
What type of transistor is this?
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