Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB IRF5305PBF

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£36.55

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£43.85

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50 - 50£0.731£36.55
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RS Stock No.:
919-4924
Mfr. Part No.:
IRF5305PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

4.69mm

Maximum Operating Temperature

+175 °C

Length

10.54mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Number of Elements per Chip

1

Height

8.77mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305PBF


This MOSFET is tailored for high-efficiency power applications, providing both flexibility and reliability. Its enhancement mode operation makes it suitable for various systems requiring controlled switching, particularly in industrial and automation environments.

Features & Benefits


• Continuous drain current capacity of 31A supports demanding applications
• Voltage rating of 55V facilitates dependable switching
• Low on-resistance of 60mΩ reduces power loss
• TO-220AB package design enhances thermal performance
• Gate-source voltage range of ±20V accommodates diverse applications
• Rapid switching optimisation boosts overall system efficiency

Applications


• Used in motor control systems for efficient operation
• Applicable in power supply circuits for stable performance
• Integrated into electronic devices requiring effective switching capabilities
• Suitable for deployment in renewable energy systems

What is the temperature range for operation?


It operates within -55°C to +175°C, making it apt for extreme conditions.

How does the package type affect performance?


The TO-220AB package provides low thermal resistance, improving cooling efficiency during operation.

Can it handle pulsed drain current applications?


Yes, it supports pulsed drain currents up to 110A, ensuring adequate performance for transient demands.

What type of transistor is this?


It is a P-channel Si MOSFET, optimised for high-efficiency applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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