Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK IRF5305STRLPBF

RS Stock No.:: 165-5895
Mfr. Part No.:: IRF5305STRLPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK IRF5305STRLPBF

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Subtotal (1 reel of 800 units)*

£443.20

(exc. VAT)

£532.00

(inc. VAT)

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Shipping from 09 January 2026

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Units	Per unit	Per Reel*
800 - 800	£0.554	£443.20
1600 +	£0.526	£420.80

*price indicative

RS Stock No.:: 165-5895
Mfr. Part No.:: IRF5305STRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10.67mm
	Width	9.65mm
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Number of Elements per Chip	1
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10.67mm
	Width 9.65mm
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Number of Elements per Chip 1
	Height 4.83mm
	Minimum Operating Temperature -55 °C

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305STRLPBF

This P-channel MOSFET is tailored for high-efficiency applications, delivering reliability and performance. It employs enhancement mode functionality, making it versatile for various electronic circuits. With robust specifications, it serves as a suitable option for automation and power management in electrical and mechanical environments.

Features & Benefits

• Maximum continuous drain current of 31A
• Maximum drain source voltage of 55V
• Surface mount configuration for seamless integration
• Maximum power dissipation capability of 110W for efficient operation
• Enhanced thermal performance with a maximum operating temperature of +175°C
• Low on-resistance of 60mΩ for improved efficiency

Applications

• For use with motor controls
• Suitable for power supply circuits
• Electronic switching
• Energy management solutions

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 4V, providing adequate control in circuit design.

How does the MOSFET handle heat?

It features a maximum power dissipation of 110W, enabling effective heat management in demanding applications.

Is this product compatible with surface mount designs?

Yes, it comes in a D2PAK package type designed specifically for surface mount applications.

What is the minimum operating temperature for functionality?

The device operates effectively at a minimum temperature of -55°C, ensuring versatility for various environments.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.