Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK IRF5305STRLPBF
- RS Stock No.:
- 165-5895
- Mfr. Part No.:
- IRF5305STRLPBF
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£443.20
(exc. VAT)
£532.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 18 December 2025
Units | Per unit | Per Reel* |
---|---|---|
800 - 800 | £0.554 | £443.20 |
1600 + | £0.526 | £420.80 |
*price indicative
- RS Stock No.:
- 165-5895
- Mfr. Part No.:
- IRF5305STRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 31 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Length | 10.67mm | |
Width | 9.65mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.67mm | ||
Width 9.65mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305STRLPBF
Features & Benefits
• Maximum drain source voltage of 55V
• Surface mount configuration for seamless integration
• Maximum power dissipation capability of 110W for efficient operation
• Enhanced thermal performance with a maximum operating temperature of +175°C
• Low on-resistance of 60mΩ for improved efficiency
Applications
• Suitable for power supply circuits
• Electronic switching
• Energy management solutions
What is the maximum gate threshold voltage?
How does the MOSFET handle heat?
Is this product compatible with surface mount designs?
What is the minimum operating temperature for functionality?
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