Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK IRF5305STRLPBF

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RS Stock No.:
165-5895
Mfr. Part No.:
IRF5305STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Length

10.67mm

Width

9.65mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

4.83mm

Minimum Operating Temperature

-55 °C

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305STRLPBF


This P-channel MOSFET is tailored for high-efficiency applications, delivering reliability and performance. It employs enhancement mode functionality, making it versatile for various electronic circuits. With robust specifications, it serves as a suitable option for automation and power management in electrical and mechanical environments.

Features & Benefits


• Maximum continuous drain current of 31A
• Maximum drain source voltage of 55V
• Surface mount configuration for seamless integration
• Maximum power dissipation capability of 110W for efficient operation
• Enhanced thermal performance with a maximum operating temperature of +175°C
• Low on-resistance of 60mΩ for improved efficiency

Applications


• For use with motor controls
• Suitable for power supply circuits
• Electronic switching
• Energy management solutions

What is the maximum gate threshold voltage?


The maximum gate threshold voltage is 4V, providing adequate control in circuit design.

How does the MOSFET handle heat?


It features a maximum power dissipation of 110W, enabling effective heat management in demanding applications.

Is this product compatible with surface mount designs?


Yes, it comes in a D2PAK package type designed specifically for surface mount applications.

What is the minimum operating temperature for functionality?


The device operates effectively at a minimum temperature of -55°C, ensuring versatility for various environments.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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