Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin D2PAK IRF5305STRLPBF
- RS Stock No.:
- 831-2834
- Mfr. Part No.:
- IRF5305STRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£10.18
(exc. VAT)
£12.22
(inc. VAT)
FREE delivery for orders over £50.00
- 420 unit(s) ready to ship
- Plus 150 unit(s) ready to ship from another location
- Plus 260 unit(s) shipping from 08 October 2025
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £1.018 | £10.18 |
50 - 90 | £0.804 | £8.04 |
100 - 240 | £0.753 | £7.53 |
250 - 490 | £0.702 | £7.02 |
500 + | £0.652 | £6.52 |
*price indicative
- RS Stock No.:
- 831-2834
- Mfr. Part No.:
- IRF5305STRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 31 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | D2PAK (TO-263) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 9.65mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
Length | 10.67mm | |
Height | 4.83mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Length 10.67mm | ||
Height 4.83mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
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