Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

£712.00

(exc. VAT)

£854.00

(inc. VAT)

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2000 - 2000£0.356£712.00
4000 +£0.338£676.00

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RS Stock No.:
913-4789
Mfr. Part No.:
IRFR5305TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

-1.3V

Maximum Operating Temperature

175°C

Height

2.39mm

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

No

COO (Country of Origin):
MX

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFR5305TRPBF


This MOSFET offers advanced performance for various electronic applications. Its low on-resistance and high current handling capabilities contribute to effective power management. With a robust design and reliable electrical characteristics, this component is suitable for various environments in automation and electronic systems.

Features & Benefits


• Achieves low on-resistance for enhanced efficiency

• Supports a maximum continuous drain current of 31A

• Designed for ease of use in surface mount applications

• Capable of operating within a temperature range of -55°C to +175°C

• Facilitates quick switching speeds for improved performance

• Allows a maximum power dissipation of 110W for diverse applications

Applications


• Utilised in power management systems

• Suitable for motor control

• Employed in switching power supplies for electronic devices

• Used in automotive circuits for improved efficiency

What are the recommended soldering techniques for installation?


Use vapour phase, infrared, or wave soldering techniques for optimal results, ensuring minimal thermal stress on the component.

Can it handle high temperature environments?


Yes, it operates effectively within a temperature range of -55°C to +175°C, making it appropriate for extreme conditions.

What is the significance of low RDS(on)?


Low RDS(on) reduces power losses, enhancing overall efficiency and decreasing heat generation during operation.

How do I ensure accurate switching behaviour?


Implement suitable gate drive circuits to achieve precise turn-on and turn-off characteristics, following the suggested trigger voltages.

Is this compatible with standard PCB layouts?


Yes, it is designed in DPAK packaging, enabling straightforward integration into typical PCB designs without the need for special modifications.

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