Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRPBF
- RS Stock No.:
- 827-4060
- Mfr. Part No.:
- IRFR5305TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£12.54
(exc. VAT)
£15.04
(inc. VAT)
FREE delivery for orders over £50.00
- 180 unit(s) ready to ship
- Plus 40 unit(s) ready to ship from another location
- Plus 3,900 unit(s) shipping from 08 October 2025
Units | Per unit | Per Pack* |
---|---|---|
20 - 80 | £0.627 | £12.54 |
100 - 180 | £0.595 | £11.90 |
200 - 480 | £0.571 | £11.42 |
500 - 980 | £0.533 | £10.66 |
1000 + | £0.501 | £10.02 |
*price indicative
- RS Stock No.:
- 827-4060
- Mfr. Part No.:
- IRFR5305TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 31 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 65 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 6.73mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 6.22mm | |
Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Forward Diode Voltage | 1.3V | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.3V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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