Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRPBF

RS Stock No.:: 827-4060
Mfr. Part No.:: IRFR5305TRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK IRFR5305TRPBF

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Subtotal (1 pack of 20 units)*

£12.54

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£15.04

(inc. VAT)

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In Stock

160 unit(s) ready to ship
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Plus 3,900 unit(s) shipping from 30 October 2025

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Units	Per unit	Per Pack*
20 - 80	£0.627	£12.54
100 - 180	£0.595	£11.90
200 - 480	£0.571	£11.42
500 - 980	£0.533	£10.66
1000 +	£0.501	£10.02

*price indicative

RS Stock No.:: 827-4060
Mfr. Part No.:: IRFR5305TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	55 V
	Package Type	DPAK (TO-252)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	65 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	6.22mm
	Length	6.73mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Forward Diode Voltage	1.3V
	Height	2.39mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 55 V
	Package Type DPAK (TO-252)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 65 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 6.22mm
	Length 6.73mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Forward Diode Voltage 1.3V
	Height 2.39mm
	Minimum Operating Temperature -55 °C

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFR5305TRPBF

This MOSFET offers advanced performance for various electronic applications. Its low on-resistance and high current handling capabilities contribute to effective power management. With a robust design and reliable electrical characteristics, this component is suitable for various environments in automation and electronic systems.

Features & Benefits

• Achieves low on-resistance for enhanced efficiency
• Supports a maximum continuous drain current of 31A
• Designed for ease of use in surface mount applications
• Capable of operating within a temperature range of -55°C to +175°C
• Facilitates quick switching speeds for improved performance
• Allows a maximum power dissipation of 110W for diverse applications

Applications

• Utilised in power management systems
• Suitable for motor control
• Employed in switching power supplies for electronic devices
• Used in automotive circuits for improved efficiency

What are the recommended soldering techniques for installation?

Use vapour phase, infrared, or wave soldering techniques for optimal results, ensuring minimal thermal stress on the component.

Can it handle high temperature environments?

Yes, it operates effectively within a temperature range of -55°C to +175°C, making it appropriate for extreme conditions.

What is the significance of low RDS(on)?

Low RDS(on) reduces power losses, enhancing overall efficiency and decreasing heat generation during operation.

How do I ensure accurate switching behaviour?

Implement suitable gate drive circuits to achieve precise turn-on and turn-off characteristics, following the suggested trigger voltages.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.