Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin IPAK IRFU5305PBF

Subtotal (1 tube of 75 units)*

£53.625

(exc. VAT)

£64.35

(inc. VAT)

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  • 3,075 unit(s) ready to ship
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Units
Per unit
Per Tube*
75 +£0.715£53.63

*price indicative

RS Stock No.:
919-5021
Mfr. Part No.:
IRFU5305PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

2.3mm

Transistor Material

Si

Typical Gate Charge @ Vgs

63 nC @ 10 V

Length

6.6mm

Number of Elements per Chip

1

Height

6.1mm

Minimum Operating Temperature

-55 °C

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