Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin IPAK IRFU5305PBF
- RS Stock No.:
- 919-5021
- Mfr. Part No.:
- IRFU5305PBF
- Brand:
- Infineon
Subtotal (1 tube of 75 units)*
£53.625
(exc. VAT)
£64.35
(inc. VAT)
FREE delivery for orders over £50.00
- 3,075 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
75 + | £0.715 | £53.63 |
*price indicative
- RS Stock No.:
- 919-5021
- Mfr. Part No.:
- IRFU5305PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 31 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | IPAK (TO-251) | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 65 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 110 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 6.6mm | |
Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
Width | 2.3mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 6.1mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type IPAK (TO-251) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.6mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Width 2.3mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 6.1mm | ||
- COO (Country of Origin):
- MX
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFU5305PBF
Features & Benefits
• Operates effectively in enhancement mode for improved performance
• Low static drain-to-source on-resistance for efficient energy consumption
• Broad gate-to-source voltage range of ±20V for versatile control
• Can withstand power dissipation levels up to 110W
• Compact TO-251 IPAK package facilitates space-efficient installation
Applications
• Employed in renewable energy systems for efficient control
• Suitable for power in electric vehicles
• Utilised in high-frequency switching power supplies for enhanced performance
What operating temperature range can be maintained?
How does installation affect performance?
What should be considered for heat management during use?
What type of circuit designs benefit from its specifications?
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