MPN

Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin IPAK IRFU9024NPBF

RS Stock No.:: 541-1657
Mfr. Part No.:: IRFU9024NPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin IPAK IRFU9024NPBF

Bulk discount available

Subtotal (1 unit)*

£0.69

(exc. VAT)

£0.83

(inc. VAT)

FREE delivery for orders over £50.00

Limited stock

108 left, ready to ship
Plus 129 left, ready to ship from another location
Plus 95 left, shipping from 11 September 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 24	£0.69
25 - 49	£0.66
50 - 99	£0.63
100 - 249	£0.59
250 +	£0.57

*price indicative

RS Stock No.:: 541-1657
Mfr. Part No.:: IRFU9024NPBF
Brand:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFU9024NPBF

This P-channel MOSFET is intended for high-efficiency power management applications. It has a maximum continuous drain current of 11A and a maximum drain-source voltage of 55V, adept at handling significant loads while ensuring reliability in various operational conditions. Its through-hole mounting type allows for seamless integration into existing designs, making it a key component for professionals in automation and electronics.

Features & Benefits

• Low Rds(on) of 175mΩ enhances energy efficiency
• Maximum power dissipation of 38W supports robust performance
• Single transistor configuration simplifies design processes
• Complies with lead-free standards for environmentally conscious applications

Applications

• Suitable for power supplies and conversion circuits
• Utilised in motor control systems for effective operation
• Integrated into battery management systems for improved performance
• Applicable in automotive environments for dependable power handling
• Ideal for industrial automation equipment requiring robust performance

What is the temperature range for stable operation?

The component operates effectively within a temperature range of -55°C to +150°C, ensuring reliable performance in various environments.

How can it handle high power loads efficiently?

With a maximum power dissipation of 38W and low Rds(on) of 175mΩ, it manages high power loads with minimal energy loss.

Is it compatible with a standard PCB layout?

Yes, the through-hole mounting type is compatible with standard PCB layouts, facilitating straightforward integration.

What criteria should be considered for gate voltage?

A gate-source voltage range of -20V to +20V provides flexibility

optimum performance is achieved at 10V for effective operation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	11 A
	Maximum Drain Source Voltage	55 V
	Package Type	IPAK (TO-251)
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	175 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	38 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	19 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	2.39mm
	Number of Elements per Chip	1
	Length	6.73mm
	Forward Diode Voltage	1.6V
	Height	6.22mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 11 A
	Maximum Drain Source Voltage 55 V
	Package Type IPAK (TO-251)
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 175 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 38 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 19 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 2.39mm
	Number of Elements per Chip 1
	Length 6.73mm
	Forward Diode Voltage 1.6V
	Height 6.22mm
	Minimum Operating Temperature -55 °C

Be the first to know about our latest products and services

Join our mailing list today:

The personal information you provide to us when signing up to the mailing list will be processed in line with our privacy policy.