Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF

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Subtotal (1 reel of 2000 units)*

£572.00

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£686.00

(inc. VAT)

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RS Stock No.:
168-7942
Mfr. Part No.:
IRFR9024NTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Width

6.22mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

2.39mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

P-Channel Power MOSFET 40V to 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF


This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.

Features & Benefits


• Maximum continuous drain current of 11A facilitates high-performance applications
• Can withstand drain-source voltage of up to 55V for increased reliability
• Low RDS(on) of 175 mΩ minimises power loss during operation
• Enhancement mode design optimises efficiency for various uses
• DPAK TO-252 surface mount package simplifies PCB integration and assembly

Applications


• Effective energy management in power supply circuits
• Suitable for motor control needing high current
• Utilised in DC-DC converters for improved efficiency
• Ideal for load switching due to rapid response times
• Employed in industrial automation systems for added reliability

What is the maximum power dissipation of this component?


It has a maximum power dissipation capability of 38W.

How does the product handle gate voltages?


The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.

What is the thermal performance of the device?


It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.

Is it easy to mount on a PCB?


Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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