Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF

RS Stock No.:: 168-7942
Mfr. Part No.:: IRFR9024NTRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF

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Subtotal (1 reel of 2000 units)*

£572.00

(exc. VAT)

£686.00

(inc. VAT)

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In Stock

10,000 unit(s) ready to ship

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Units	Per unit	Per Reel*
2000 - 2000	£0.286	£572.00
4000 +	£0.272	£544.00

*price indicative

RS Stock No.:: 168-7942
Mfr. Part No.:: IRFR9024NTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	11 A
	Maximum Drain Source Voltage	55 V
	Package Type	DPAK (TO-252)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	175 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	38 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	19 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Length	6.73mm
	Width	6.22mm
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 11 A
	Maximum Drain Source Voltage 55 V
	Package Type DPAK (TO-252)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 175 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 38 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 19 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Length 6.73mm
	Width 6.22mm
	Minimum Operating Temperature -55 °C
	Height 2.39mm

COO (Country of Origin):: MX

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF

This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.

Features & Benefits

• Maximum continuous drain current of 11A facilitates high-performance applications
• Can withstand drain-source voltage of up to 55V for increased reliability
• Low RDS(on) of 175 mΩ minimises power loss during operation
• Enhancement mode design optimises efficiency for various uses
• DPAK TO-252 surface mount package simplifies PCB integration and assembly

Applications

• Effective energy management in power supply circuits
• Suitable for motor control needing high current
• Utilised in DC-DC converters for improved efficiency
• Ideal for load switching due to rapid response times
• Employed in industrial automation systems for added reliability

What is the maximum power dissipation of this component?

It has a maximum power dissipation capability of 38W.

How does the product handle gate voltages?

The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.

What is the thermal performance of the device?

It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.

Is it easy to mount on a PCB?

Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.