Infineon HEXFET Type P-Channel MOSFET, -11 A, -55 V Enhancement, 3-Pin TO-252 IRFR9024NTRLPBF
- RS Stock No.:
- 262-6770
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£14.15
(exc. VAT)
£16.975
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.566 | £14.15 |
| 125 - 225 | £0.538 | £13.45 |
| 250 - 600 | £0.515 | £12.88 |
| 625 - 1225 | £0.492 | £12.30 |
| 1250 + | £0.311 | £7.78 |
*price indicative
- RS Stock No.:
- 262-6770
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -11A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12.7nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Distrelec Product Id | 304-41-678 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -11A | ||
Maximum Drain Source Voltage Vds -55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12.7nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Distrelec Product Id 304-41-678 | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
Fast switching
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